Mfr Part #:

IXFN38N100Q2

Mfr Name: IXYS

N-Channel Power MOSFET, 1000V drain-source voltage, 38A continuous drain current, 0.25Ω on-resistance, in a SOT-227 miniBLOC package.

✓ Total Stock: 2,208 pcs

$ Price Range: $64.48

IXFN38N100Q2 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,628 pcs On Request	1628 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	580 pcs On Request	580 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IXFN38N100Q2 Description

Short technical summary and product information.

The IXFN38N100Q2 is an N-Channel enhancement mode Power MOSFET from IXYS, part of the HiPerFET family. It features a drain-source breakdown voltage of 1000V and a continuous drain current of 38A at 25°C. The device offers a low on-resistance of 0.25Ω maximum at VGS=10V, ensuring high efficiency in power conversion applications.

This MOSFET is avalanche rated with a single pulse avalanche energy of 5.0J and repetitive avalanche energy of 60mJ, providing ruggedness in inductive switching environments. It has a low gate charge of 250nC and fast switching times (turn-on delay 25ns, rise time 28ns, turn-off delay 57ns, fall time 15ns), making it suitable for high-frequency switched-mode power supplies and DC-DC converters.

The device is housed in a SOT-227B miniBLOC package with aluminium nitride isolation, offering 2500V isolation voltage and low package inductance. It is chassis mountable with a mounting torque of 1.5Nm and terminal connection torque of 1.5Nm. The operating junction temperature range is -55°C to 150°C.

IXFN38N100Q2 Quick Information

Product Type: Power MOSFET

Canonical Name: IXYS IXFN38N100Q2 N-Channel Power MOSFET, 1000V, 38A, SOT-227

Subcategory: Single MOSFET

IXFN38N100Q2 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IXFN38N100Q2 Estimated Pricing

Qty	Low	High
300+	$64.48	$64.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN38N100Q2 Features

1000V drain-source breakdown voltage.
38A continuous drain current rating.
Low on-resistance of 0.25Ω.
Avalanche rated for rugged operation.
SOT-227B miniBLOC package.

IXFN38N100Q2 Applications

Used in DC-DC converters.
Suitable for switched-mode power supplies.
Ideal for DC choppers.
Used in pulse generators.

IXFN38N100Q2 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

1000V.

What package is the IXFN38N100Q2 available in?

SOT-227-4 miniBLOC (SOT-227B).

What is the operating temperature range?

-55°C to 150°C.

Is the IXFN38N100Q2 RoHS compliant?

RoHS3 Compliant (unverified).

What is the on-resistance of the IXFN38N100Q2?

0.25Ω maximum at VGS=10V, ID=19A.

What is the gate charge of this MOSFET?

250nC maximum at VGS=10V.

What is the continuous drain current rating?

38A at Tc=25°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	IXYS
Current	38 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	250 nC
Input Capacitance (Ciss) (Max) @ Vds	7200 pF
Mounting Type	Chassis Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	0.25 Ω
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	SOT-227B
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	2.5V ~ 5V
Weight	30 g