| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFN360N10T is a high-performance N-Channel power MOSFET designed for demanding power switching applications. With a drain-source voltage rating of 100V and a continuous drain current of 360A (at Tc), it delivers robust performance in high-current circuits. The device features a maximum on-resistance of 2.6mOhm at 180A and 10V gate drive, ensuring low conduction losses. It also offers a gate charge of 505nC and input capacitance of 36000pF, which are important for switching speed considerations. The MOSFET is housed in a SOT-227-4 (miniBLOC) package with a SOT-227B supplier device package, designed for chassis mounting. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 830W. This component is suitable for applications such as motor drives, power supplies, and inverters where high current handling and low resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $33.51 | $33.51 |
| 10+ | $24.39 | $24.39 |
| 100+ | $23.68 | $23.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
SOT-227-4 (miniBLOC) with SOT-227B supplier device package.
-55°C to 175°C (junction).
RoHS3 Compliant (unverified).
360A at Tc.
2.6mOhm maximum at 180A and 10V gate drive.
505nC maximum at 10V gate-source voltage.