| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFN280N085 is an N-Channel power MOSFET manufactured by IXYS. It is designed for high-current switching applications with a drain-source voltage rating of 85V and a continuous drain current of 280A at case temperature. The device utilizes MOSFET (Metal Oxide) technology.
Key electrical characteristics include a maximum drain-source on-resistance of 4.4mOhm at 100A and 10V gate drive, a maximum gate threshold voltage of 4V at 8mA, and a maximum gate charge of 580nC at 10V. Input capacitance is 19000pF at 25V. The device can dissipate up to 700W at case temperature.
The MOSFET is housed in a SOT-227-4 (miniBLOC) package with chassis mount configuration, suitable for direct mounting to a heatsink. The operating junction temperature range is -55°C to 150°C. The gate-source voltage rating is ±20V.
This component is suitable for applications requiring high current handling and low conduction losses, such as power supplies, motor drives, and inverters. The SOT-227B package provides robust thermal performance.
| Qty | Low | High |
|---|---|---|
| 300+ | $38.57 | $38.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
85V.
280A at case temperature.
4.4mOhm maximum at 100A and 10V gate drive.
-55°C to 150°C junction temperature.
SOT-227-4 (miniBLOC) chassis mount package.
It is listed as RoHS3 compliant, but this is unverified.
580nC maximum at 10V gate-source voltage.