| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 750 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFN27N80Q is an N-Channel MOSFET manufactured by IXYS. It features a drain-to-source voltage rating of 800V and a continuous drain current of 27A at case temperature. The device has a maximum drain-source on-resistance of 320mOhm at 500mA and 10V gate drive.
Key electrical characteristics include a maximum gate charge of 170nC at 10V and an input capacitance of 7600pF at 25V. The gate-source threshold voltage is 4.5V at 4mA, and the maximum gate-source voltage is ±20V. Power dissipation is rated at 520W at case temperature.
The MOSFET is housed in a SOT-227-4 miniBLOC package, which is designed for chassis mount applications. The supplier device package is SOT-227B. It operates over a junction temperature range of -55°C to 150°C.
This device is suitable for high-voltage switching applications such as power supplies, inverters, and motor drives. Its low on-resistance and high current capability make it efficient for power conversion.
| Qty | Low | High |
|---|---|---|
| 300+ | $28.91 | $28.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
27A at case temperature.
320mOhm max at 500mA, 10V.
SOT-227-4 miniBLOC (SOT-227B).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
170nC max at 10V.