IXFN200N10P N-Channel MOSFET with 100V drain-source voltage and 200A continuous drain current. Housed in a SOT-227B package for chassis mounting.
Mfr Part #:

IXFN200N10P

Available from 2 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET with 100V drain-source voltage and 200A continuous drain current. Housed in a SOT-227B package for chassis mounting.
Total Stock: 9,852 pcs
$ Price Range: $24.05 - $33.93

IXFN200N10P Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,850 pcs
9850 pcs On Request 1 On Request On Request 1031+ On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

IXFN200N10P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFN200N10P Description

Short technical summary and product information.

The IXFN200N10P is an N-Channel MOSFET from IXYS, designed for high-current switching applications. It features a drain-to-source voltage of 100V and a continuous drain current of 200A, making it suitable for power conversion and motor control circuits.

 

With a maximum on-resistance of 7.5 mOhm at 500mA and 10V gate drive, this device offers low conduction losses. The gate threshold voltage is 5V at 8mA, and the maximum gate charge is 235nC at 10V, which helps in estimating switching performance.

 

The device is housed in a SOT-227-4 (miniBLOC) package, which is designed for chassis mounting. This package provides good thermal performance, with a maximum power dissipation of 680W. The operating junction temperature range is -55°C to 175°C.

 

This MOSFET is suitable for high-power applications such as switch-mode power supplies, DC-DC converters, and motor drives, where high current handling and low on-resistance are critical.

IXFN200N10P Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 100V, 200A, SOT-227B
Subcategory: Single MOSFET

IXFN200N10P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFN200N10P Estimated Pricing

Qty Low High
1+ $33.93 $33.93
10+ $25.00 $25.00
100+ $24.05 $24.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN200N10P Features

  • N-Channel MOSFET for high-current switching.
  • 100V drain-to-source voltage rating.
  • 200A continuous drain current capability.
  • Low 7.5 mOhm maximum on-resistance.
  • SOT-227B chassis mount package.

IXFN200N10P Applications

  • Ideal for high-power switch-mode power supplies.
  • Used in DC-DC converter circuits.
  • Suitable for motor drive applications.
  • Applicable in power inverter designs.

IXFN200N10P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IXFN200N10P?

The maximum drain-to-source voltage is 100V.

What is the continuous drain current rating of the IXFN200N10P?

The continuous drain current is 200A at case temperature.

What is the maximum on-resistance of the IXFN200N10P?

The maximum on-resistance is 7.5 mOhm at 500mA drain current and 10V gate-source voltage.

What is the operating temperature range of the IXFN200N10P?

The operating junction temperature range is -55°C to 175°C.

What is the package type of the IXFN200N10P?

The package is SOT-227-4 (miniBLOC) with supplier device package SOT-227B.

What is the maximum power dissipation of the IXFN200N10P?

The maximum power dissipation is 680W at case temperature.

What is the maximum gate-source voltage for the IXFN200N10P?

The maximum gate-source voltage is ±20V.

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