| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5 pcs
|
5 pcs | On Request | 1 | On Request | On Request | 0045 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK90N20Q is a high-power N-channel MOSFET from IXYS. It is designed for switching applications requiring up to 200V drain-source voltage and 90A continuous drain current. The device features a maximum on-resistance of 22mΩ at 45A and 10V gate drive, ensuring low conduction losses.
With a gate charge of 190nC at 10V and input capacitance of 6800pF at 25V, the MOSFET offers good switching performance for moderate frequency operation. The maximum power dissipation is 500W, allowing use in high-power circuits.
The MOSFET is housed in a through-hole TO-264AA package (also known as TO-264-3), suitable for mounting on heatsinks in industrial power supplies, motor drivers, and inverters. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $19.79 | $19.79 |
| 10+ | $14.78 | $14.78 |
| 100+ | $12.78 | $12.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200 V
90 A at case temperature (Tc)
-55°C to 150°C junction temperature
Through-hole TO-264-3 / TO-264AA package
RoHS3 Compliant (unverified)
4 V at 4 mA drain current
190 nC at 10 V