| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK80N50Q3 from IXXYS is an N-Channel MOSFET designed for high-power switching applications. It offers a maximum drain-source voltage of 500V and a continuous drain current of 80A at case temperature, with a maximum power dissipation of 1250W.
Key electrical characteristics include a low drain-source on-resistance of 65mΩ at 40A and 10V gate drive, ensuring high efficiency. The gate charge is 200nC at 10V, and input capacitance is 10000pF at 25V, making it suitable for high-frequency switching.
The device is packaged in a through-hole TO-264AA (IXFK) package, facilitating easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 150°C, providing robust performance in demanding environments.
| Qty | Low | High |
|---|---|---|
| 300+ | $27.88 | $27.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500 V.
It is available in a TO-264-3 / TO-264AA through-hole package.
The junction temperature range is -55°C to 150°C.
The listed RoHS status is RoHS3 Compliant, but this is unverified.
The maximum continuous drain current is 80 A at case temperature (Tc).
The maximum Rds(on) is 65 mΩ at 40 A and 10 V gate drive.
The maximum gate charge (Qg) is 200 nC at 10 V.