| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK60N55Q2 is an N-Channel power MOSFET from IXYS, designed for high-voltage switching. It features a drain-source voltage rating of 550V and a continuous drain current of 60A. The on-resistance is typically 88mOhm maximum at 30A and 10V gate drive. The device has a maximum gate charge of 200nC and input capacitance of 7300pF, making it suitable for moderate-speed switching applications. Power dissipation is rated at 735W, and the operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a TO-264AA through-hole package, which allows for efficient heat sinking. It is designed for use in power supplies, motor drives, and other high-voltage circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $30.16 | $30.16 |
| 10+ | $24.15 | $24.15 |
| 100+ | $20.87 | $20.87 |
| 500+ | $19.76 | $19.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
550V.
60A at case temperature.
88mOhm at 30A and 10V gate drive.
-55°C to 150°C (junction).
TO-264-3, TO-264AA through-hole.
200nC at 10V.
It is listed as RoHS3 compliant, but this status is unverified.