| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK420N10T is an N-Channel power MOSFET from IXYS designed for high-current switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 420A at case temperature. The device utilizes MOSFET technology with a maximum on-resistance of 2.6mOhm at 60A and 10V gate drive.
Electrical characteristics include a gate threshold voltage of 5V at 8mA, maximum gate-source voltage of ±20V, and a gate charge of 670nC at 10V. Input capacitance is 47000pF at 25V drain-source. The device can dissipate up to 1670W at case temperature and operates over a junction temperature range of -55°C to 175°C.
The MOSFET is housed in a TO-264-3 / TO-264AA package with through-hole mounting. The supplier device package is TO-264AA (IXFK). This package is suitable for high-power applications requiring efficient heat dissipation.
| Qty | Low | High |
|---|---|---|
| 1+ | $25.50 | $25.50 |
| 10+ | $19.35 | $19.35 |
| 100+ | $15.90 | $15.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
420A at case temperature.
2.6mOhm maximum at 60A, 10V.
-55°C to 175°C junction temperature.
TO-264-3 / TO-264AA through-hole package.
RoHS3 compliant (unverified).
5V maximum at 8mA.