IXFK36N60P IXYS IXFK36N60P is an N-Channel power MOSFET with 600V drain-source voltage, 36A drain current, and 190mOhm on-resistance. Housed in a TO-264AA through-hole package.
Mfr Part #:

IXFK36N60P

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXYS IXFK36N60P is an N-Channel power MOSFET with 600V drain-source voltage, 36A drain current, and 190mOhm on-resistance. Housed in a TO-264AA through-hole package.
Total Stock: 9 pcs
$ Price Range: $10.26

IXFK36N60P Available from 1 distributor

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9 pcs
9 pcs On Request 1 On Request On Request On Request On Request 2026-04-21 06:15:11

IXFK36N60P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFK36N60P Description

Short technical summary and product information.

The IXYS IXFK36N60P is an N-Channel enhancement-mode power MOSFET designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 600V and a continuous drain current of 36A at case temperature. The device offers a low on-resistance of 190mOhm at 10V gate drive, enabling efficient power conversion.

 

With a maximum power dissipation of 650W and an operating junction temperature range of -55°C to 150°C, this MOSFET is suitable for demanding thermal environments. The gate charge is 102nC at 10V, and input capacitance is 5800pF at 25V drain-source, indicating moderate switching speed.

 

The IXFK36N60P is packaged in a TO-264AA through-hole package, which provides robust mechanical mounting and effective heat dissipation. It is RoHS3 compliant and has an MSL of Level 1 (unlimited). This part is ideal for power supplies, motor drives, and other high-voltage switching circuits.

IXFK36N60P Quick Information

Product Type: Power MOSFET
Canonical Name: IXYS IXFK36N60P N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IXFK36N60P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFK36N60P Estimated Pricing

Qty Low High
300+ $10.26 $10.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFK36N60P Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 36A.
  • Low on-resistance of 190mOhm at 10V gate drive.
  • High power dissipation capability of 650W.
  • Through-hole TO-264AA package for easy mounting.

IXFK36N60P Applications

  • Used in high-voltage power supply circuits.
  • Ideal for motor drive and inverter applications.
  • Suitable for DC-DC converter designs.
  • Applicable in battery charging systems.

IXFK36N60P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFK36N60P?

The maximum drain-source voltage (Vdss) is 600V.

What is the maximum drain current of the IXFK36N60P?

The maximum drain current is 36A at case temperature (Tc).

What is the on-resistance of the IXFK36N60P?

The maximum on-resistance is 190mOhm at Vgs=10V and Id=18A.

What is the operating temperature range of the IXFK36N60P?

The operating junction temperature range is -55°C to 150°C.

What package does the IXFK36N60P come in?

The IXFK36N60P is available in a TO-264AA through-hole package.

Is the IXFK36N60P RoHS compliant?

Yes, the IXFK36N60P is RoHS3 compliant (unverified).

What is the gate charge of the IXFK36N60P?

The maximum gate charge is 102nC at Vgs=10V.

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