IXFK360N10T A 100V, 360A N-Channel MOSFET from IXYS in a TO-264AA through-hole package. Features low on-resistance of 2.9mOhm and high power dissipation of 1250W.
Mfr Part #:

IXFK360N10T

Available from 1 distributors
Mfr Name: IXYS
IXYS
A 100V, 360A N-Channel MOSFET from IXYS in a TO-264AA through-hole package. Features low on-resistance of 2.9mOhm and high power dissipation of 1250W.
Total Stock: 1,090 pcs
$ Price Range: $10.63 - $19.09

IXFK360N10T Available from 1 distributor

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IXFK360N10T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFK360N10T Description

Short technical summary and product information.

The IXFK360N10T is an N-Channel power MOSFET from IXYS designed for high-current switching applications. It offers a drain-source voltage rating of 100V and a continuous drain current of 360A at case temperature. With a maximum on-resistance of 2.9mOhm at 10V gate drive, this device provides efficient power conversion with minimal conduction losses.

 

Key electrical characteristics include a gate charge of 525nC and input capacitance of 33000pF, which influence switching performance in high-frequency circuits. The maximum power dissipation is rated at 1250W, and the junction can operate from -55°C to 175°C, suitable for demanding thermal environments.

 

The device is housed in a TO-264-3 (TO-264AA) through-hole package, offering robust mechanical mounting and effective heat dissipation via a metal tab. It is commonly used in power supplies, motor drives, DC-DC converters, and battery management systems where high current and low resistance are critical.

IXFK360N10T Quick Information

Product Type: MOSFET
Canonical Name: IXYS IXFK360N10T N-Channel Power MOSFET
Subcategory: Single MOSFETs

IXFK360N10T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFK360N10T Estimated Pricing

Qty Low High
1+ $19.09 $19.09
10+ $13.45 $13.45
100+ $10.63 $10.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFK360N10T Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 360A.
  • Low on-resistance of 2.9mOhm at 10V gate drive.
  • High power dissipation of 1250W.
  • Operating junction temperature range -55°C to 175°C.

IXFK360N10T Applications

  • High current switching power supplies.
  • DC-DC converter applications.
  • Motor drive and inverter circuits.
  • Battery protection and management systems.

IXFK360N10T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFK360N10T?

The maximum drain-source voltage is 100V.

What is the package type for this MOSFET?

It is available in a TO-264-3 (TO-264AA) through-hole package.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

Is the IXFK360N10T RoHS compliant?

It is listed as RoHS3 compliant, but this status is unverified.

What is the continuous drain current rating?

The maximum continuous drain current is 360A at case temperature.

What is the typical gate charge of this device?

The maximum gate charge is 525nC at 10V gate-source voltage.

What is the maximum on-resistance?

The maximum drain-source on-resistance is 2.9mOhm at 100A and 10V gate drive.

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