| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK32N100P is an N-Channel MOSFET from IXYS, designed for high-voltage power applications. It features a maximum drain-source voltage of 1000V and continuous drain current of 32A (at Tc). The device offers a low on-resistance of 320mOhm (maximum at 16A, 10V gate drive), minimizing conduction losses.
With a gate charge of 225nC and input capacitance of 14200pF, the IXFK32N100P is suitable for switching applications where drive characteristics are important. The gate threshold voltage is 6.5V (max at 1mA), and maximum gate-source voltage is ±30V. Power dissipation is rated at 960W (at Tc), enabling robust performance in demanding circuits.
The MOSFET is packaged in a through-hole TO-264AA (TO-264-3) case, also known as the supplier device package TO-264AA (IXFK). It operates over a junction temperature range of -55°C to 150°C. This component is RoHS3 compliant, with MSL level 1 (unlimited) and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $30.42 | $30.42 |
| 10+ | $20.48 | $20.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
Through-hole TO-264AA (TO-264-3) package.
-55°C to 150°C (junction temperature).
RoHS3 Compliant.
32A at Tc.
320mOhm maximum at 16A, 10V.
225nC maximum at 10V.