| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,006 pcs
|
2006 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,269 pcs
|
1269 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
35 pcs
|
35 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK27N80Q is an N-Channel MOSFET manufactured by IXYS, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 27A at case temperature (Tc). The device has a maximum drain-source on-state resistance (Rds On) of 320 mΩ at a gate-source voltage of 10V and a drain current of 500mA, ensuring efficient conduction in high-power circuits.
The MOSFET utilizes metal-oxide semiconductor technology and offers a maximum power dissipation of 500W at case temperature, making it suitable for demanding thermal environments. It operates over a junction temperature range of -55°C to 150°C, providing robust performance across a wide temperature spectrum. The gate threshold voltage (Vgs(th)) is specified at a maximum of 4.5V at a drain current of 4mA, and the device can handle a maximum gate-source voltage of ±20V.
With an input capacitance (Ciss) of 7600 pF at Vds=25V and a total gate charge (Qg) of 170 nC at Vgs=10V, the IXFK27N80Q is optimized for moderate-speed switching applications. The device is available in a TO-264-3 (TO-264AA) package, which is a through-hole mounting type, facilitating easy integration into power electronic designs.
This MOSFET is suitable for use in power supplies, inverters, and other high-voltage switching circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 300+ | $24.89 | $24.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
800V.
27A at case temperature.
TO-264-3 or TO-264AA (IXFK).
-55°C to 150°C junction temperature.
320 milliohms at 500mA and 10V gate drive.
The supplier lists it as RoHS3 compliant, but this has not been independently verified.
500W at case temperature.