| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK230N20T is an N-Channel enhancement-mode power MOSFET from IXYS. It features a maximum drain-to-source voltage of 200V and a continuous drain current rating of 230A. The on-resistance is typically 7.5mOhm at a gate drive of 10V, enabling high-efficiency switching.
This device uses MOSFET (Metal Oxide) technology and is designed for high-power applications requiring low conduction losses. Key electrical characteristics include a gate charge of 378nC and input capacitance of 28000pF.
The IXFK230N20T is housed in a through-hole TO-264-3 / TO-264AA package, suitable for PCB mounting. Maximum power dissipation is 1670W.
| Qty | Low | High |
|---|---|---|
| 1+ | $35.00 | $35.00 |
| 10+ | $28.02 | $28.02 |
| 100+ | $24.23 | $24.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V
230A at Tc
7.5mOhm maximum at Id = 60A and Vgs = 10V
TO-264-3 / TO-264AA, through-hole mounting
10V
1670W at Tc
±20V