IXFK220N17T2 N-Channel MOSFET from IXYS with 170V drain-source voltage and 220A continuous drain current. Features low on-resistance of 6.3mOhm and TO-264AA through-hole package.
Mfr Part #:

IXFK220N17T2

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel MOSFET from IXYS with 170V drain-source voltage and 220A continuous drain current. Features low on-resistance of 6.3mOhm and TO-264AA through-hole package.
Total Stock: 1,200 pcs
$ Price Range: $10.97 - $18.80

IXFK220N17T2 Available from 1 distributor

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1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request

IXFK220N17T2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFK220N17T2 Description

Short technical summary and product information.

The IXFK220N17T2 is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-power switching applications requiring high current and voltage handling. The device features a drain-source voltage (Vdss) of 170V and a continuous drain current of 220A at case temperature (Tc). With a maximum on-resistance of 6.3mOhm at 60A and 10V gate drive, it offers low conduction losses. The gate threshold voltage is 5V at 8mA drain current. The MOSFET has a maximum gate charge of 500nC at 10V and input capacitance of 31000pF at 25V drain-source voltage, indicating moderate switching speed. It can dissipate up to 1250W at case temperature. The device operates over a junction temperature range of -55°C to 175°C. It is housed in a TO-264-3 / TO-264AA through-hole package, suitable for mounting on heatsinks. The supplier device package is TO-264AA (IXFK). This MOSFET is suitable for applications such as power supplies, motor drives, and inverters where high current and voltage ratings are required.

IXFK220N17T2 Quick Information

Product Type: N-Channel MOSFET
Series: GigaMOS Trench T2 HiperFET
Canonical Name: IXYS IXFK220N17T2 N-Channel MOSFET, 170V, 220A, TO-264AA
Subcategory: N-Channel MOSFET

IXFK220N17T2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFK220N17T2 Estimated Pricing

Qty Low High
1+ $18.80 $18.80
10+ $13.11 $13.11
100+ $10.97 $10.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFK220N17T2 Features

  • N-Channel MOSFET with 170V drain-source voltage.
  • Continuous drain current rating of 220A.
  • Low on-resistance of 6.3 milliohms typical.
  • Through-hole TO-264AA package for heatsink mounting.
  • Operating temperature range -55°C to 175°C.

IXFK220N17T2 Applications

  • Used in high-power DC-DC converter circuits.
  • Suitable for motor drive and inverter applications.
  • Ideal for battery management and power switching.
  • Applicable in industrial power supply designs.

IXFK220N17T2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFK220N17T2?

170V.

What package is the IXFK220N17T2 available in?

TO-264-3 / TO-264AA through-hole package.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the IXFK220N17T2 RoHS compliant?

RoHS3 Compliant (unverified).

What is the maximum continuous drain current?

220A at case temperature.

What is the typical on-resistance?

6.3 mOhm maximum at 60A, 10V.

What is the gate charge of the IXFK220N17T2?

500 nC maximum at 10V gate-source voltage.

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