| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK200N10P is an N-Channel power MOSFET manufactured by IXYS, designed for high-current switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current rating of 200A at case temperature. The device offers a low on-resistance of 7.5mOhm maximum at 100A and 10V gate drive, enabling efficient power management.
Electrical characteristics include a gate threshold voltage of 5V maximum at 8mA, and a recommended gate drive voltage of 10V. The maximum gate charge is 235nC at 10V, and input capacitance is 7600pF at 25V. The device is capable of dissipating up to 830W at case temperature, with an operating junction temperature range of -55°C to 175°C.
The MOSFET is packaged in a through-hole TO-264-3, TO-264AA package, which is suitable for high-power board-level designs. The supplier device package is designated as TO-264AA (IXFK).
Typical applications include high-power switching power supplies, motor drives, DC-DC converters, and industrial power inverters where high efficiency and robust performance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $23.85 | $23.85 |
| 10+ | $15.44 | $15.44 |
| 100+ | $15.05 | $15.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-264-3, TO-264AA (through-hole).
-55°C to 175°C.
RoHS3 compliant according to existing data, but unverified.
200A at case temperature.
7.5mOhm maximum at 100A and 10V gate drive.
10V (max Rds on).