| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,600 pcs
|
2600 pcs | On Request | 1 | On Request | On Request | 22+23+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFK160N30T is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-power switching applications. It features a maximum drain-source voltage of 300V and a continuous drain current of 160A at case temperature. The device offers a low on-resistance of 19mΩ (max) at 60A and 10V gate drive, minimizing conduction losses. With a maximum gate charge of 335nC at 10V and input capacitance of 28000pF, it is suitable for high-frequency switching. The MOSFET is housed in a through-hole TO-264AA package, providing robust thermal performance with a maximum power dissipation of 1390W at case temperature. It operates over a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and has an MSL of Level 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $24.54 | $24.54 |
| 10+ | $19.65 | $19.65 |
| 100+ | $16.98 | $16.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
300V.
TO-264-3, TO-264AA (through-hole).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
160A at case temperature.
19mΩ maximum at 60A, 10V.
335nC at 10V.