| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The IXFK102N30P is an N-Channel enhancement-mode power MOSFET designed for high-voltage switching applications. It offers a breakdown voltage of 300V and a maximum on-resistance of 33mOhm, enabling efficient power conversion.
Key electrical characteristics include an input capacitance of 7.5nF, rise time of 28ns, and fall time of 30ns, with a reverse recovery time of 200ns. The device can dissipate up to 700W and operates over a junction temperature range of -55°C to +150°C.
This MOSFET is housed in a TO-264 package with through-hole mounting, suitable for high-power PCBs. It is designed for a range of applications including switching power supplies, motor controls, and power inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 300V.
The maximum on-resistance is 33mOhm.
The maximum power dissipation is 700W.
The operating temperature range is -55°C to +150°C.
The package is TO-264 with through-hole mounting.
The input capacitance is 7.5nF.
Rise time is 28ns and fall time is 30ns.