IXFH88N30P N-Channel Power MOSFET with 300V drain-source voltage and 88A continuous drain current. Features low on-resistance of 40mΩ and fast switching performance.
Mfr Part #:

IXFH88N30P

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel Power MOSFET with 300V drain-source voltage and 88A continuous drain current. Features low on-resistance of 40mΩ and fast switching performance.
Total Stock: 23 pcs
$ Price Range: $11.09 - $19.41

IXFH88N30P Available from 1 distributor

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IXFH88N30P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFH88N30P Description

Short technical summary and product information.

The IXFH88N30P is an N-Channel enhancement mode power MOSFET from IXYS, part of the Polar HiPerFET series. It is designed for high power switching applications requiring high voltage and current handling with low conduction losses.

 

Key electrical specifications include a maximum drain-source voltage of 300V, continuous drain current of 88A at 25°C case temperature, and a maximum on-resistance of 40mΩ at Vgs=10V and Id=44A. The gate threshold voltage ranges from 2.5V to 5V. Input capacitance is 6300pF and total gate charge is 180nC, enabling efficient high-frequency switching. The device includes a fast intrinsic diode with a maximum reverse recovery time of 200ns.

 

Thermal characteristics include a maximum power dissipation of 600W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The MOSFET is housed in a TO-247-3 (TO-247AD) through-hole package with a weight of 6g and a recommended mounting torque of 1.13 Nm.

 

Typical applications include DC-DC converters, battery chargers, switch-mode power supplies, AC and DC motor drives, and uninterruptible power supplies. The device is avalanche rated for ruggedness in demanding environments.

IXFH88N30P Quick Information

Product Type: Power MOSFET
Series: HiPerFET, PolarP2
Canonical Name: IXFH88N30P N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IXFH88N30P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IXFH88N30P Estimated Pricing

Qty Low High
1+ $19.41 $19.41
10+ $14.17 $14.17
120+ $12.28 $12.28
510+ $11.09 $11.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH88N30P Features

  • 300V drain-source voltage rating.
  • 88A continuous drain current capability.
  • Low on-resistance of 40 milliohms.
  • Fast intrinsic diode with 200ns recovery.
  • Avalanche rated for rugged operation.

IXFH88N30P Applications

  • Used in DC-DC converter circuits.
  • Ideal for battery charger designs.
  • Suitable for switch-mode power supplies.
  • Applied in AC and DC motor drives.
  • Used in uninterruptible power supplies.

IXFH88N30P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

300V.

What is the continuous drain current rating?

88A at Tc=25°C.

What is the on-resistance?

40mΩ maximum at Vgs=10V, Id=44A.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package is this MOSFET available in?

TO-247-3 (TO-247AD) through-hole.

Is this device RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

2.5V to 5V.

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