| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,783 pcs
|
6783 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
4,583 pcs
|
4583 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,079 pcs
|
1079 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXFH80N65X2 is a high-voltage, high-current N-Channel power MOSFET designed for demanding power conversion and switching applications. With a drain-to-source voltage rating of 650V and continuous drain current of 80A at case temperature, this device suits applications requiring robust high-voltage switching.
Key electrical characteristics include a maximum drain-source on-resistance of 40 milliohms at 40A and 10V gate drive, a maximum gate charge of 143 nC at 10V, and an input capacitance of 8245 pF at 25V. The device operates over a junction temperature range of -55°C to 150°C and can dissipate up to 890W at case temperature.
The MOSFET is housed in a TO-247-3 through-hole package (supplier device package TO-247 (IXTH)), which offers efficient thermal management for high-power designs. The part is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $18.70 | $18.70 |
| 10+ | $11.61 | $11.61 |
| 120+ | $11.02 | $11.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The maximum continuous drain current is 80 A at case temperature (Tc).
The maximum drain-source on-resistance is 40 mOhm at 40A drain current and 10V gate voltage.
It is available in a TO-247-3 through-hole package (supplier device package TO-247 (IXTH)).
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation is 890 W at case temperature.
Yes, the RoHS status is reported as RoHS3 Compliant (unverified).