| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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224 pcs
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224 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH76N07-11 is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-power switching applications. It features a maximum drain-source voltage of 70V and a continuous drain current rating of 76A at case temperature. The on-resistance is typically 11mOhm (max) at 40A with 10V gate drive, enabling efficient power conversion. Gate charge is 240 nC at 10V, and input capacitance is 4400 pF at 25V drain-source voltage.
This device requires a 10V gate drive for optimal conduction and can handle up to 360W power dissipation at case temperature. The operating junction temperature range is -55°C to 175°C, making it suitable for harsh environments.
The part is housed in a through-hole TO-247-3 package (supplier device package TO-247AD), allowing robust mechanical mounting and thermal management. Typical applications include switch-mode power supplies, DC-DC converters, motor drives, and industrial power control.
| Qty | Low | High |
|---|---|---|
| 300+ | $15.36 | $15.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum 70V.
76A at case temperature.
11mOhm maximum at 40A with 10V gate drive.
Through-hole TO-247-3 (supplier device package TO-247AD).
-55°C to 175°C (junction temperature).
240 nC at 10V gate voltage.
Data indicates RoHS3 compliant but unverified.