| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
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600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXFH75N10 is an N-Channel enhancement-mode power MOSFET designed for high-efficiency power switching applications. It utilizes planar MOSFET technology to deliver a drain-to-source voltage rating of 100V and a continuous drain current of 75A at Tc=25°C.
Key electrical characteristics include a maximum drain-to-source on-resistance of 20mOhm at Vgs=10V and Id=37.5A, a maximum input capacitance of 4500pF at Vds=25V, and a maximum gate charge of 260nC at Vgs=10V. The device can dissipate up to 300W at Tc=25°C and operates over a junction temperature range of -55°C to +150°C.
Housed in a TO-247-3 through-hole package (supplier device package TO-247AD), the IXFH75N10 is suitable for a variety of power conversion and motor control circuits. The maximum gate-source voltage rating is ±20V, ensuring robust gate drive handling.
| Qty | Low | High |
|---|---|---|
| 30+ | $6.99 | $6.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 V.
75 A at Tc.
20 mOhm maximum at Vgs=10V and Id=37.5A.
TO-247-3 (through-hole), supplier device package TO-247AD.
-55°C to +150°C.
RoHS3 compliant (unverified).