IXFH60N65X2

The IXFH60N65X2 is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage, high-current power switching applications. Key electrical specifications include a drain-source voltage rating of 650 V and a continuous drain current of 60 A at case temperature. The device exhibits a maximum on-state resistance of 52 mOhm at a gate voltage of 10 V and a drain current of 30 A. The gate charge is 107 nC at 10 V, and the input capacitance is 6180 pF at 25 V.

The MOSFET is built using metal-oxide semiconductor technology and supports a gate-source voltage range of ±30 V. The operating junction temperature range is -55°C to 150°C. The device is indicated as RoHS3 compliant, but compliance status is unverified.

The part is offered in a TO-247-3 package with through-hole mounting, specifically the TO-247 (IXTH) supplier device package. This through-hole package is suitable for power modules and industrial power supplies where efficient heat dissipation is required. The high power dissipation capability of 780 W makes it ideal for demanding thermal environments.

Typical applications include switch-mode power supplies, uninterruptible power supplies, DC-DC converters, motor drives, and other power conversion circuits. The part is cross-referenced as IXFH60N65X2-ND on distributor platforms.