| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,104 pcs
|
1104 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH60N50P3 is a high-voltage N-Channel MOSFET manufactured by IXYS. This power MOSFET is designed for applications requiring up to 500V drain-source voltage and 60A continuous drain current. It uses planar stripe technology and offers a maximum on-resistance of 100mOhm at 30A and 10V gate drive. The device also features a gate charge of 96nC and input capacitance of 6250pF, making it suitable for switching applications. It can dissipate up to 1040W of power. The MOSFET is through-hole mounted and comes in a TO-247-3 package. Its operating temperature range is -55°C to 150°C. Typical applications include power supplies, inverters, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.70 | $13.70 |
| 10+ | $10.44 | $10.44 |
| 120+ | $8.70 | $8.70 |
| 510+ | $7.75 | $7.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500 V.
The maximum continuous drain current is 60 A at case temperature.
The maximum on-resistance is 100 mOhm at 30A drain current and 10V gate voltage.
The operating temperature range is -55°C to 150°C.
The device is available in a TO-247-3 through-hole package.
Yes, the device is RoHS3 compliant.
The maximum gate threshold voltage is 5V at 4mA drain current.