| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
70 pcs
|
70 pcs | On Request | 1 | On Request | On Request | 0035 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH58N20 is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-power switching applications. It features a drain-source voltage rating of 200V and a continuous drain current of 58A at case temperature. The device has a maximum on-resistance of 40mOhm at 29A and 10V gate drive, ensuring low conduction losses. Gate charge is 220nC at 10V, and input capacitance is 4400pF at 25V, indicating moderate switching speed. The MOSFET is housed in a TO-247-3 through-hole package (TO-247AD), suitable for high-power dissipation up to 300W. Operating junction temperature range is -55°C to 150°C. This device is commonly used in power supplies, motor drives, and inverters.
| Qty | Low | High |
|---|---|---|
| 300+ | $11.15 | $11.15 |
| 510+ | $9.94 | $9.94 |
| 1,020+ | $9.29 | $9.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
58A at case temperature.
40mOhm maximum at 29A and 10V gate drive.
220nC at 10V.
-55°C to 150°C junction temperature.
TO-247-3 (TO-247AD) through-hole.
RoHS status is reported as compliant but unverified.