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IXFH52N30Q N-Channel Power MOSFET with 300V drain-to-source voltage and 52A continuous drain current. Features low on-resistance of 60mΩ maximum.
Mfr Part #:

IXFH52N30Q

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel Power MOSFET with 300V drain-to-source voltage and 52A continuous drain current. Features low on-resistance of 60mΩ maximum.
✓ Total Stock: 3,480 pcs
$ Price Range: $10.09 - $18.82

IXFH52N30Q Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,480 pcs
On Request
3480 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFH52N30Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXFH52N30Q Description

Short technical summary and product information.

The IXFH52N30Q by IXYS is a high-voltage N-Channel power MOSFET built with the HiPerFET Q-Class process. It is designed for switching applications requiring a 300V drain-to-source voltage (VDSS) and continuous drain current of 52A at 25°C.

 

The device features a low maximum on-resistance of 60mΩ (at VGS=10V, ID=500mA) and a total gate charge of 150nC, enabling efficient high-frequency switching. It is avalanche rated for robust operation and includes a fast intrinsic rectifier.

 

This MOSFET is offered in the international-standard TO-247AD package, which facilitates easy mounting and provides high power density. The part's operating junction temperature range is -55°C to +150°C, suitable for demanding environments.

IXFH52N30Q Quick Information

Product Type: Power MOSFET
Series: Q-Class
Canonical Name: N-Channel Power MOSFET, 300V, 52A
Subcategory: N-Channel MOSFET

IXFH52N30Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH52N30Q Estimated Pricing

Qty Low High
1+ $18.82 $18.82
10+ $11.84 $11.84
100+ $10.09 $10.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH52N30Q Features

  • N-Channel enhancement-mode power MOSFET.
  • 300V drain-to-source voltage rating.
  • 52A continuous drain current capability.
  • 60mΩ maximum on-resistance at 10V.
  • 150nC total gate charge maximum.

IXFH52N30Q Applications

  • Power supplies and DC-DC converters.
  • Motor drives and inverters.
  • Switch-mode power supply circuits.
  • High-voltage power switching modules.

IXFH52N30Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the IXFH52N30Q?

300 V

What is the maximum continuous drain current?

52 A at TC = 25°C

What is the on-resistance (Rds(on)) of this MOSFET?

60 mΩ maximum at VGS = 10 V, ID = 500 mA

What is the total gate charge?

150 nC maximum at VGS = 10 V

What is the input capacitance?

5300 pF typical at VDS = 25 V

What is the package type?

TO-247AD (compatible with TO-247)

What is the operating temperature range?

Junction and storage temperature range -55°C to +150°C

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