| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,121 pcs
|
3121 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
686 pcs
|
686 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH50N85X is an N-Channel MOSFET from IXYS, designed for high-voltage switching applications. It features a drain-to-source voltage (Vdss) of 850V and a continuous drain current (Id) of 50A at case temperature. The maximum on-resistance (Rds(on)) is 105mΩ at a drain current of 500mA and gate voltage of 10V. The device requires a gate drive voltage of 10V and has a maximum gate threshold voltage of 5.5V at 4mA drain current.
The MOSFET is housed in a TO-247-3 (IXTH) through-hole package, suitable for high-power dissipation. It can dissipate up to 890W at case temperature, with an operating junction temperature range of -55°C to 150°C. The input capacitance (Ciss) is 4480pF at 25V drain-source voltage, and the total gate charge (Qg) is 152nC at 10V gate-source voltage. The maximum gate-source voltage is ±30V.
This MOSFET is intended for applications such as power supplies, motor drives, inverters, and industrial power control where high voltage and high current handling are required. The through-hole package allows for efficient heat sinking and robust mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $22.04 | $22.04 |
| 10+ | $13.89 | $13.89 |
| 120+ | $13.60 | $13.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 850V.
The device is in a TO-247-3 (IXTH) through-hole package.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, but this is unverified and should be treated as low confidence.
The maximum continuous drain current (Id) is 50A at case temperature.
The maximum drain-source on-resistance (Rds(on)) is 105mΩ at 500mA drain current and 10V gate drive.
The maximum gate charge (Qg) is 152nC at 10V gate-source voltage.