| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH50N50P3 is an N-Channel enhancement mode Power MOSFET from IXYS, part of the Polar3 HiperFET family. It is designed for high voltage switching applications with a drain-source voltage rating of 500V and continuous drain current of 50A at 25°C. The device features a maximum on-resistance of 125mΩ at VGS=10V, ensuring low conduction losses. It is avalanche rated with a maximum energy of 500mJ and includes a fast intrinsic rectifier for improved switching performance. The MOSFET is available in a TO-247AD through-hole package, suitable for easy mounting and high power dissipation up to 960W. Typical applications include switch-mode power supplies, DC-DC converters, motor drives, and laser drivers. The device operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.47 | $12.47 |
| 30+ | $7.52 | $7.52 |
| 120+ | $6.43 | $6.43 |
| 510+ | $6.14 | $6.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IXFH50N50P3 has a maximum drain-source voltage (VDSS) of 500V.
The IXFH50N50P3 is available in a TO-247-3 (TO-247AD) through-hole package.
The junction temperature range is -55°C to 150°C.
The IXFH50N50P3 is reported as RoHS3 compliant, but this is unverified.
The continuous drain current is 50A at Tc=25°C.
The maximum on-resistance is 125 mΩ at VGS=10V, ID=25A.
The gate threshold voltage is 3V to 5V at ID=4mA.