| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 1516+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH36N60P is an N-Channel MOSFET from IXYS designed for high voltage and high current switching applications. It features a drain-source voltage rating of 600V and a continuous drain current of 36A at 25°C case temperature. The on-resistance is typically 190mOhm at 18A drain current and 10V gate drive. The device has a maximum gate charge of 102nC at 10V and an input capacitance of 5800pF at 25V drain-source voltage. The gate threshold voltage is 5V maximum at 4mA.
The MOSFET is housed in a through-hole TO-247-3 package (supplier package TO-247AD). It can dissipate up to 650W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. The recommended gate drive voltage is 10V, with a maximum gate-source voltage of ±30V. This component is suitable for power supply designs, inverters, and other high-voltage switching circuits where low on-resistance and high efficiency are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $15.93 | $15.93 |
| 10+ | $9.75 | $9.75 |
| 120+ | $8.96 | $8.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
36A at 25°C case temperature.
190mOhm at 18A, 10V.
102nC at 10V.
-55°C to 150°C junction temperature.
TO-247-3 (supplier package TO-247AD) through-hole.
RoHS3 compliant (unverified).