| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,751 pcs
|
1751 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH34N65X2 is an N-Channel enhancement-mode MOSFET from IXYS, designed for high-voltage power switching applications. It offers a drain-source voltage rating of 650V and a continuous drain current of 34A at 25°C case temperature. The device features a low on-resistance of 105mOhm maximum at a gate-source voltage of 10V and drain current of 17A, enabling efficient power conversion.
This MOSFET has a maximum gate threshold voltage of 5.5V at a drain current of 2.5mA, and a maximum gate charge of 56nC at a gate-source voltage of 10V. The input capacitance is 3330pF maximum at a drain-source voltage of 25V. The device can dissipate up to 540W of power at case temperature, and operates over a junction temperature range of -55°C to 150°C.
The IXFH34N65X2 is supplied in a through-hole TO247-3 package, also known as TO247 (IXTH). This package is suitable for mounting on heatsinks for thermal management in high-power circuits. The device is RoHS compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $10.63 | $10.63 |
| 10+ | $6.11 | $6.11 |
| 120+ | $5.64 | $5.64 |
| 510+ | $5.59 | $5.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 650V.
The continuous drain current is 34A at 25°C case temperature.
The maximum on-resistance is 105mOhm at a gate-source voltage of 10V and drain current of 17A.
The IXFH34N65X2 is available in a TO247-3 through-hole package (TO247 IXTH).
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 5.5V at a drain current of 2.5mA.
The maximum power dissipation is 540W at case temperature.