| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH32N50 is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage switching applications requiring a drain-source breakdown voltage of 500V and continuous drain current of 32A. The device features a maximum on-resistance of 150mOhm at 15A and 10V gate drive, with a gate threshold voltage of 4V at 4mA. Input capacitance is 5700pF at 25V, and maximum gate charge is 300nC at 10V. Power dissipation is rated at 360W at case temperature. The MOSFET is housed in a TO-247-3 through-hole package (TO-247AD) and operates over a junction temperature range of -55°C to 150°C. This component is suitable for power supplies, motor drives, and other high-voltage switching circuits.
| Qty | Low | High |
|---|---|---|
| 30+ | $8.74 | $8.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-247-3 (TO-247AD).
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified).
32A at case temperature.
150mOhm maximum at 15A and 10V gate drive.
300nC maximum at 10V gate-source voltage.