DistyParts Icon
IXFH28N60P3 N-Channel enhancement mode Power MOSFET from IXYS. 600V drain-source voltage, 28A continuous drain current, 260mΩ on-resistance.
Mfr Part #:

IXFH28N60P3

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel enhancement mode Power MOSFET from IXYS. 600V drain-source voltage, 28A continuous drain current, 260mΩ on-resistance.
✓ Total Stock: 4,500 pcs
$ Price Range: $5.02 - $10.54

IXFH28N60P3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,500 pcs
On Request
4500 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFH28N60P3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

IXFH28N60P3 Description

Short technical summary and product information.

The IXFH28N60P3 is an N-Channel enhancement mode Power MOSFET from IXYS, part of the Polar3 HiperFET series. It features a drain-source voltage (Vdss) of 600V and a continuous drain current rating of 28A at 25°C. The device offers a maximum on-resistance of 260mΩ with VGS = 10V.

 

Designed for high-performance switching applications, this MOSFET is avalanche rated and includes a fast intrinsic rectifier. It can handle pulsed drain currents up to 70A and dissipates up to 695W at 25°C case temperature. The gate threshold voltage ranges from 3.0V to 5.0V.

 

The IXFH28N60P3 is supplied in a TO-247 package (TO-247AD). It is suitable for switch-mode power supplies, DC-DC converters, laser drivers, and motor drive circuits.

IXFH28N60P3 Quick Information

Product Type: Power MOSFET
Series: PolarP3
Canonical Name: IXFH28N60P3 N-Channel Power MOSFET
Subcategory: Single N-Channel

IXFH28N60P3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH28N60P3 Estimated Pricing

Qty Low High
1+ $10.54 $10.54
10+ $6.39 $6.39
120+ $5.27 $5.27
510+ $5.02 $5.02

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH28N60P3 Features

  • 600V drain-source voltage rating.
  • 28A continuous drain current capability.
  • Low 260mΩ on-resistance at 10V gate drive.
  • Avalanche rated for rugged operation.
  • Fast intrinsic rectifier included.

IXFH28N60P3 Applications

  • Switch-mode and resonant-mode power supplies.
  • DC-DC converter designs.
  • Laser driver circuits.
  • AC and DC motor drives.
  • Robotics and servo control systems.

IXFH28N60P3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IXFH28N60P3?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current (ID) is 28A at TC = 25°C.

What is the typical on-resistance of this MOSFET?

The maximum on-resistance (RDS(on)) is 260mΩ at VGS = 10V.

What is the gate threshold voltage?

The gate threshold voltage (VGS(th)) is minimum 3.0V and maximum 5.0V at VDS = VGS, ID = 2.5mA.

What package is the IXFH28N60P3 available in?

The IXFH28N60P3 is offered in a TO-247 package (TO-247AD).

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

Home
Account

Categories