| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
870 pcs
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870 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH26N60Q is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage switching applications, offering a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 26A at case temperature (Tc). The device features a low maximum on-resistance (Rds(on)) of 250mOhm at Vgs=10V and Id=13A, enabling efficient power conversion.
This MOSFET utilizes standard gate drive voltages up to ±20V and has a maximum gate threshold voltage (Vgs(th)) of 4.5V at Id=4mA. The input capacitance (Ciss) is typically 5100pF at Vds=25V, and the total gate charge (Qg) is 200nC at Vgs=10V, which helps in estimating switching losses.
The IXFH26N60Q is supplied in a through-hole TO247-3 package (TO247AD variant), suitable for PCB mounting with adequate thermal management. The maximum power dissipation is 360W at case temperature (Tc), and the operating junction temperature range is -55°C to +150°C.
The maximum drain-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 26A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 250mOhm at Vgs=10V and Id=13A.
The IXFH26N60Q is supplied in a through-hole TO247-3 package (TO247AD variant).
The operating junction temperature range is -55°C to +150°C.