| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,500 pcs
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4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXFH26N50Q is an N-Channel MOSFET manufactured by IXYS. It features a maximum drain-source voltage of 500V and a continuous drain current of 26A at case temperature. The drain-source on-resistance is 200mΩ maximum at a gate voltage of 10V and drain current of 13A.
With a gate charge of 95nC at 10V and input capacitance of 3900pF at 25V, this device is suitable for high-voltage switching applications. It can dissipate up to 300W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-247-3 through-hole package, also known as TO-247AD (IXFH). This package provides robust mounting for power applications. The component uses MOSFET (Metal Oxide) technology and is an N-Channel enhancement mode device.
| Qty | Low | High |
|---|---|---|
| 30+ | $5.78 | $5.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
It comes in a TO-247-3 through-hole package, also known as TO-247AD (IXFH).
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this information is unverified.
The maximum continuous drain current is 26A at case temperature.
The maximum drain-source on-resistance is 200 mΩ at 13A drain current and 10V gate voltage.