| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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The IXFH26N50P is an N-Channel enhancement mode power MOSFET from IXYS, part of the HiPerFET family. It is rated for a drain-source voltage of 500V and a continuous drain current of 26A at 25°C, with pulsed current capability up to 78A. The device features a low on-resistance of 230mΩ maximum at VGS = 10V and ID = 13A, enabling efficient power conversion. Gate threshold voltage ranges from 3.0V to 5.5V.
Electrical characteristics include typical input capacitance of 3600pF, output capacitance 370pF, and reverse transfer capacitance 40pF. Total gate charge is 60nC at 10V. Switching speeds are fast with typical turn-on delay of 20ns and rise time of 25ns. The integrated fast intrinsic diode offers a reverse recovery time of 200ns and an avalanche energy rating of 1.0J single pulse. Power dissipation is 400W at case temperature 25°C.
The MOSFET is housed in a TO-247-3 through-hole package with supplier device package TO-247AD. Operating temperature range is -55°C to 150°C. The device is avalanche rated and suitable for demanding applications such as switch-mode power supplies, DC-DC converters, motor drives, and inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.85 | $10.85 |
| 10+ | $7.72 | $7.72 |
| 120+ | $6.43 | $6.43 |
| 510+ | $5.69 | $5.69 |
| 1,020+ | $5.36 | $5.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V.
TO-247-3 through-hole package.
-55°C to 150°C.
RoHS3 Compliant per existing data (unverified).
26A at case temperature 25°C.
230 mΩ maximum at VGS=10V, ID=13A.
Yes, single pulse avalanche energy rating is 1.0 J.