IXFH26N50P N-Channel power MOSFET from IXYS with 500V drain-source breakdown voltage and 26A continuous drain current. Features low on-resistance of 230mΩ and is housed in a TO-247 package.
Mfr Part #:

IXFH26N50P

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel power MOSFET from IXYS with 500V drain-source breakdown voltage and 26A continuous drain current. Features low on-resistance of 230mΩ and is housed in a TO-247 package.
Total Stock: 6 pcs
$ Price Range: $5.36 - $10.85

IXFH26N50P Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6 pcs
6 pcs On Request 1 On Request On Request On Request On Request On Request

IXFH26N50P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

IXFH26N50P Description

Short technical summary and product information.

The IXFH26N50P is an N-Channel enhancement mode power MOSFET from IXYS, part of the HiPerFET family. It is rated for a drain-source voltage of 500V and a continuous drain current of 26A at 25°C, with pulsed current capability up to 78A. The device features a low on-resistance of 230mΩ maximum at VGS = 10V and ID = 13A, enabling efficient power conversion. Gate threshold voltage ranges from 3.0V to 5.5V.

 

Electrical characteristics include typical input capacitance of 3600pF, output capacitance 370pF, and reverse transfer capacitance 40pF. Total gate charge is 60nC at 10V. Switching speeds are fast with typical turn-on delay of 20ns and rise time of 25ns. The integrated fast intrinsic diode offers a reverse recovery time of 200ns and an avalanche energy rating of 1.0J single pulse. Power dissipation is 400W at case temperature 25°C.

 

The MOSFET is housed in a TO-247-3 through-hole package with supplier device package TO-247AD. Operating temperature range is -55°C to 150°C. The device is avalanche rated and suitable for demanding applications such as switch-mode power supplies, DC-DC converters, motor drives, and inverters.

IXFH26N50P Quick Information

Product Type: Power MOSFET
Series: HiPerFET
Canonical Name: IXFH26N50P N-Channel Power MOSFET
Subcategory: Single MOSFET

IXFH26N50P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH26N50P Estimated Pricing

Qty Low High
1+ $10.85 $10.85
10+ $7.72 $7.72
120+ $6.43 $6.43
510+ $5.69 $5.69
1,020+ $5.36 $5.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH26N50P Features

  • 500V drain-source breakdown voltage.
  • 26A continuous drain current rating.
  • Low 230mΩ on-resistance at 10V.
  • Fast intrinsic diode with 200ns recovery.
  • Avalanche rated for robust operation.

IXFH26N50P Applications

  • Suitable for switch-mode power supplies.
  • Used in DC-DC converters and inverters.
  • Ideal for motor control circuits.
  • Common in uninterruptible power supplies.

IXFH26N50P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

500V.

What package does this MOSFET come in?

TO-247-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C.

Is it RoHS compliant?

RoHS3 Compliant per existing data (unverified).

What is the continuous drain current?

26A at case temperature 25°C.

What is the on-resistance?

230 mΩ maximum at VGS=10V, ID=13A.

Does it have avalanche energy rating?

Yes, single pulse avalanche energy rating is 1.0 J.

Home
Account

Categories