| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,457 pcs
|
1457 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH26N50 is an N-Channel enhancement-mode MOSFET manufactured by IXYS. It is designed for high-voltage switching applications, with a drain-to-source voltage rating of 500V and a continuous drain current of 26A at case temperature. The device features a maximum drain-to-source on-resistance of 200mΩ at a gate drive of 10V and a drain current of 13A.
This MOSFET utilizes metal-oxide semiconductor technology and offers a maximum gate charge of 160nC at 10V, along with an input capacitance of 4200pF at 25V. The gate threshold voltage is 4V maximum at 4mA, and the maximum gate-source voltage is ±20V. With a maximum power dissipation of 300W at case temperature, the device is suitable for power switching circuits.
The IXFH26N50 is housed in a TO-247-3 package with a TO-247AD supplier device package, featuring through-hole mounting for robust mechanical attachment. It operates over a junction temperature range of -55°C to 150°C, making it suitable for demanding thermal environments.
| Qty | Low | High |
|---|---|---|
| 300+ | $6.33 | $6.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 500V.
The maximum drain current is 26A at case temperature.
The maximum on-resistance is 200mΩ at a drain current of 13A and gate-source voltage of 10V.
The IXFH26N50 is available in a TO-247-3 package with a TO-247AD supplier device package, using through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation is 300W at case temperature.
The maximum gate-source voltage is ±20V.