| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
263 pcs
|
263 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH23N80Q is a HiPerFET Q-Class N-Channel enhancement mode power MOSFET from IXYS. It is avalanche rated and features low gate charge (Qg) and low on-resistance (RDS(on) max 420 mOhm) for high efficiency in switching applications.
Key electrical specifications include a drain-source voltage (Vdss) of 800V, continuous drain current of 23A at Tc=25°C, pulsed drain current of 92A, and maximum power dissipation of 500W. The device is rated for an operating junction temperature range of -55°C to +150°C.
The IXFH23N80Q is supplied in a TO-247AD through-hole package (TO-247-3), designated as supplier device package TO-247AD (IXFH). This package offers easy mounting and good thermal performance with a junction-to-case thermal resistance of 0.25 K/W.
| Qty | Low | High |
|---|---|---|
| 30+ | $15.13 | $15.13 |
| 120+ | $10.49 | $10.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 800V.
The maximum continuous drain current is 23A at Tc=25°C, and the pulsed drain current is 92A.
The maximum drain-source on-resistance (RDS(on)) is 420 mOhm at Vgs=10V and Id=0.5*Id25.
The operating junction temperature range is -55°C to +150°C.
The IXFH23N80Q is available in a TO-247-3 through-hole package, specifically the TO-247AD (IXFH) supplier device package.
Yes, it has a maximum single-pulse avalanche energy (EAS) of 1.5J and a repetitive avalanche current (IAR) of 23A at Tc=25°C.
The maximum reverse recovery time (trr) is 250ns at If=Is and Vgs=0V.