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IXFH22N65X2 The IXFH22N65X2 is an N-Channel Power MOSFET from IXYS with a 650V drain-source voltage rating and 22A continuous drain current.
Mfr Part #:

IXFH22N65X2

Available from 2 distributors
Mfr Name: IXYS
IXYS
The IXFH22N65X2 is an N-Channel Power MOSFET from IXYS with a 650V drain-source voltage rating and 22A continuous drain current.
✓ Total Stock: 9,427 pcs
$ Price Range: $4.37 - $9.19

IXFH22N65X2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
6,280 pcs
On Request
6280 pcs On Request 1 On Request On Request 18+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,147 pcs
On Request
3147 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFH22N65X2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Fall Time (Typ)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rise Time (Typ)
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXFH22N65X2 Description

Short technical summary and product information.

The IXFH22N65X2 is an N-Channel enhancement mode Power MOSFET from IXYS, part of the HiPerFET family. It features an avalanche rating and low on-resistance (typical 145mOhm) combined with low gate charge.

 

This device is designed for high power density applications. Key electrical specifications include a maximum drain-source voltage of 650V, continuous drain current of 22A at 25°C case temperature, and a pulsed drain current rating of 44A. The maximum power dissipation is 390W.

 

The IXFH22N65X2 is offered in the TO-247-3 package for through-hole mounting. The package has a typical weight of 6.0g and a recommended mounting torque of 1.13 Nm. The operating junction temperature range is -55°C to +150°C.

IXFH22N65X2 Quick Information

Product Type: Power MOSFET
Series: HiPerFET
Canonical Name: IXFH22N65X2 Power MOSFET from IXYS
Subcategory: Single N-Channel MOSFET

IXFH22N65X2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH22N65X2 Estimated Pricing

Qty Low High
1+ $9.19 $9.19
10+ $5.37 $5.37
120+ $4.52 $4.52
510+ $4.37 $4.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH22N65X2 Features

  • N-Channel enhancement mode MOSFET.
  • Rated for 650V drain-source voltage.
  • Continuous drain current of 22A.
  • Low typical on-resistance of 145mOhm.
  • Avalanche rated for ruggedness.

IXFH22N65X2 Applications

  • Used in switch-mode power supplies.
  • Suitable for DC-DC converter circuits.
  • Ideal for PFC (Power Factor Correction).
  • Used in AC and DC motor drives.

IXFH22N65X2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IXFH22N65X2?

The maximum drain-to-source voltage (Vdss) is 650 V.

What is the continuous drain current rating of the IXFH22N65X2?

The continuous drain current is 22 A at a case temperature of 25°C.

What is the typical on-resistance (Rds(on)) of this MOSFET?

The typical on-resistance is 145 mOhm at Vgs = 10V and Id = 11A.

What is the operating junction temperature range for this device?

The operating junction temperature range is -55°C to +150°C.

What package is the IXFH22N65X2 available in?

This variant of the MOSFET comes in a TO-247-3 through-hole package.

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