| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH20N85X is an N-Channel enhancement-mode power MOSFET manufactured by IXYS. It features a drain-to-source voltage (Vdss) of 850V and a continuous drain current (Id) of 20A at case temperature (Tc). The device is designed for high-voltage switching applications and offers a maximum on-resistance (Rds(on)) of 330 mOhm at Vgs = 10V and Id = 500mA.
This MOSFET is housed in a TO-247-3 through-hole package, providing robust thermal performance with a maximum power dissipation of 540W at Tc. The operating junction temperature range is -55°C to 150°C, suitable for demanding environments. Gate drive voltage is rated at ±30V maximum, with a typical gate charge (Qg) of 63 nC at Vgs = 10V.
The IXFH20N85X is suitable for applications such as switch-mode power supplies, motor drives, and high-voltage inverters. Its low on-resistance and high voltage rating make it a reliable choice for efficient power conversion.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.02 | $13.02 |
| 10+ | $7.22 | $7.22 |
| 120+ | $6.81 | $6.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 850V.
The continuous drain current (Id) is 20A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 330 mOhm at Vgs = 10V and Id = 500mA.
It comes in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum power dissipation is 540W at case temperature (Tc).
The maximum gate charge (Qg) is 63 nC at Vgs = 10V.