IXFH20N60

The IXFH20N60 is an N-channel enhancement-mode power MOSFET manufactured by IXYS. It is designed for high-voltage power switching applications, offering a drain-source breakdown voltage of 600V and a continuous drain current of 20A at case temperature 25°C. The device features a maximum on-resistance of 350mOhm at Vgs=10V, enabling low conduction losses.

Electrical characteristics include a typical gate charge of 151nC to 170nC, input capacitance of 4500pF, and fast switching times with typical turn-on delay of 20ns and fall time of 40ns. The MOSFET is capable of handling 300W of power dissipation at 25°C case temperature, and it operates over a junction temperature range of -55°C to 150°C.

It is supplied in a TO-247-3 through-hole package, also known as TO-247AD, which allows easy mounting with a single screw. The package has low inductance and provides high power density. The device also includes a fast intrinsic rectifier with reverse recovery time of 250ns typical at 25°C.

Typical applications include DC-DC converters, switched-mode power supplies, motor control, battery chargers, and AC motor control. The unclamped inductive switching (UIS) rating ensures robustness in harsh environments. The part is rated for avalanche current of 20A and avalanche energy of 30mJ at 25°C.