| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,900 pcs
|
1900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | 834 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH18N90P is an N-Channel power MOSFET designed for high-voltage switching applications. Manufactured by IXYS, it features a drain-source voltage (Vdss) of 900V and a continuous drain current (Id) of 18A at 25°C case temperature. The device uses MOSFET (Metal Oxide) technology.
Key electrical parameters include a maximum drain-source on-resistance (Rds(on)) of 600mOhm at 500mA and 10V gate drive, a gate charge (Qg) of 97nC at 10V, and a gate threshold voltage (Vgs(th)) of 6.5V at 1mA. Input capacitance (Ciss) is 5230pF at 25V drain-source voltage. The recommended drive voltage is 10V with a maximum gate-source voltage of ±30V.
The device is offered in a through-hole TO-247-3 package (supplier package TO-247AD). It can dissipate up to 540W power (at case temperature) and operates over a junction temperature range of -55°C to +150°C. The product is listed as RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $16.94 | $16.94 |
| 10+ | $10.43 | $10.43 |
| 120+ | $9.31 | $9.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
TO-247-3 (through-hole).
-55°C to +150°C (junction).
RoHS3 Compliant.
18A at 25°C case temperature.
600 milliohms maximum at 500mA, 10V gate drive.
97 nC maximum at 10V gate voltage.