IXFH15N100Q3 N-Channel Power MOSFET rated for 1000V drain-source voltage and 15A continuous drain current. Features low on-resistance of 1.05 Ohm and fast intrinsic rectifier.
Mfr Part #:

IXFH15N100Q3

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel Power MOSFET rated for 1000V drain-source voltage and 15A continuous drain current. Features low on-resistance of 1.05 Ohm and fast intrinsic rectifier.
Total Stock: 155 pcs
$ Price Range: $13.31 - $21.66

IXFH15N100Q3 Available from 1 distributor

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IXFH15N100Q3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFH15N100Q3 Description

Short technical summary and product information.

The IXFH15N100Q3 is an N-Channel enhancement mode Power MOSFET from IXYS, part of the HiperFET family. It is designed for high-voltage switching applications with a drain-source breakdown voltage of 1000V and continuous drain current of 15A at 25°C case temperature. The device features a low on-resistance of 1.05 Ohm maximum at VGS=10V and ID=7.5A, and a total gate charge of 64 nC typical, enabling efficient switching.

 

This MOSFET is avalanche rated with a single pulse avalanche energy of 1.0J. It includes a fast intrinsic rectifier with reverse recovery time ≤250ns. The device is housed in a TO-247 package (TO-247AD) with through-hole mounting, suitable for high-power applications requiring good thermal management. The junction-to-case thermal resistance is 0.18°C/W maximum, allowing a maximum power dissipation of 690W at 25°C case temperature.

 

Typical applications include DC-DC converters, battery chargers, switch-mode power supplies, DC choppers, and temperature/lighting controls. The operating junction temperature range is -55°C to 150°C.

IXFH15N100Q3 Quick Information

Product Type: Power MOSFET
Series: HiPerFET Q3-Class
Canonical Name: IXFH15N100Q3 N-Channel MOSFET
Subcategory: Single MOSFET

IXFH15N100Q3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH15N100Q3 Estimated Pricing

Qty Low High
1+ $21.66 $21.66
10+ $15.59 $15.59
120+ $13.31 $13.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH15N100Q3 Features

  • N-Channel enhancement mode Power MOSFET.
  • Rated for 1000V drain-source voltage.
  • Continuous drain current of 15A.
  • Low on-resistance of 1.05 Ohm.
  • Fast intrinsic rectifier with 250ns trr.

IXFH15N100Q3 Applications

  • Used in DC-DC converter circuits.
  • Ideal for battery charger designs.
  • Suitable for switch-mode power supplies.
  • Applied in DC chopper systems.
  • Used in temperature and lighting controls.

IXFH15N100Q3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction).

What package does the IXFH15N100Q3 come in?

TO-247-3 (TO-247AD).

Is the IXFH15N100Q3 RoHS compliant?

The database indicates RoHS3 compliant, but this is unverified.

What is the drain-source voltage rating?

1000V minimum.

What is the continuous drain current?

15A at 25°C case temperature.

What is the on-resistance?

1.05 Ohm maximum at VGS=10V, ID=7.5A.

What is the gate threshold voltage?

Maximum 6.5V at VDS=VGS, ID=4mA.

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