| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
325 pcs
|
325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH15N100 is an N-Channel MOSFET from IXYS, designed for high-voltage applications. It features a drain-source voltage rating of 1000V and continuous drain current of 15A. The device has a maximum on-resistance of 700 mOhm at 500mA drain current and 10V gate drive. Gate charge is 220 nC at 10V, and input capacitance is 4500 pF at 25V.
With a maximum power dissipation of 360W and an operating junction temperature range of -55°C to 150°C, this MOSFET is suitable for demanding power switching environments. The gate threshold voltage is 4.5V maximum at 4mA, and the gate-source voltage range is ±20V.
The part is housed in a through-hole TO-247-3 package (TO-247AD), which provides excellent thermal performance. It is ideal for use in high-voltage power supplies, inverters, and motor control circuits.
1000V.
TO-247-3 (TO-247AD).
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 Compliant, though this is unverified.
Maximum 220 nC at 10V gate-source voltage.
Maximum 700 mOhm at 500mA drain current and 10V gate drive.