| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH150N15P is a high-performance N-Channel Power MOSFET designed and manufactured by IXYS. It is rated for a maximum drain-source voltage of 150V and a continuous drain current of 150A at case temperature (Tc). The device features a low drain-source on-resistance of 13mΩ at 500mA and 10V gate drive, ensuring efficient power switching. The gate threshold voltage is 5V at 4mA, and the maximum gate-source voltage is ±20V. With a maximum power dissipation of 714W at Tc, this MOSFET is suitable for high-power applications. The input capacitance is 5800pF at 25V, and the total gate charge is 190nC at 10V. The device is packaged in a TO-247-3 (TO-247AD) through-hole package, which provides excellent thermal performance. The operating junction temperature range is -55°C to 175°C. This MOSFET is ideal for use in power supplies, motor drives, and other high-current switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $17.27 | $17.27 |
| 10+ | $12.02 | $12.02 |
| 120+ | $9.51 | $9.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
150A at case temperature (Tc).
13mΩ at 500mA and 10V gate drive.
-55°C to 175°C junction temperature.
TO-247-3 (TO-247AD) through-hole package.
It is listed as RoHS3 Compliant, but this status is unverified.
5V at 4mA drain current.