IXFH14N60P N-Channel enhancement mode Power MOSFET rated at 600V drain-source voltage and 14A continuous drain current. Features low on-resistance of 550mΩ and avalanche rated.
Mfr Part #:

IXFH14N60P

Available from 1 distributors
Mfr Name: IXYS
IXYS
N-Channel enhancement mode Power MOSFET rated at 600V drain-source voltage and 14A continuous drain current. Features low on-resistance of 550mΩ and avalanche rated.
Total Stock: 156 pcs
$ Price Range: $3.65 - $8.19

IXFH14N60P Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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156 pcs
156 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

IXFH14N60P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFH14N60P Description

Short technical summary and product information.

The IXFH14N60P is an N-Channel enhancement mode Power MOSFET from IXYS, part of the HiPerFET family with PolarP technology. It is rated for a drain-source voltage of 600V and a continuous drain current of 14A at 25°C. The device features a maximum on-resistance of 550mΩ at Vgs=10V and Id=7A, and a typical gate charge of 36nC.

 

This MOSFET is avalanche rated with a maximum avalanche energy of 900mJ at 25°C. It includes a source-drain diode with a maximum forward voltage of 1.5V and a typical reverse recovery time of 200ns. The device is designed for high power density and easy mounting.

 

The IXFH14N60P is housed in a TO-247AD (TO-247-3) through-hole package. It has a maximum power dissipation of 300W at 25°C case temperature and an operating junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.42°C/W.

 

Typical applications include switch-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics. The device is RoHS3 compliant and REACH unaffected.

IXFH14N60P Quick Information

Product Type: Power MOSFET
Series: PolarP
Canonical Name: IXFH14N60P N-Channel Power MOSFET, 600V, 14A, TO-247AD
Subcategory: N-Channel Enhancement Mode MOSFET

IXFH14N60P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFH14N60P Estimated Pricing

Qty Low High
1+ $8.19 $8.19
10+ $5.57 $5.57
120+ $4.57 $4.57
510+ $3.65 $3.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH14N60P Features

  • N-Channel enhancement mode Power MOSFET.
  • Rated for 600V drain-source voltage.
  • Continuous drain current of 14A at 25°C.
  • Low on-resistance of 550mΩ maximum.
  • Avalanche rated with 900mJ energy capability.

IXFH14N60P Applications

  • Switch-mode and resonant-mode power supplies.
  • DC-DC converters and PFC circuits.
  • AC and DC motor drives.
  • Robotics and servo control systems.

IXFH14N60P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFH14N60P?

The drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current (Id) is 14A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 550mΩ at Vgs=10V and Id=7A.

What package is the IXFH14N60P available in?

It is available in a TO-247AD (TO-247-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the IXFH14N60P RoHS compliant?

RoHS compliance is indicated as RoHS3 Compliant, but this is unverified and should be confirmed from an authoritative source.

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