| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH14N100Q2 is an N-Channel MOSFET from IXYS designed for high-voltage switching applications. It features a drain-source voltage rating of 1000V and a continuous drain current of 14A at 25°C case temperature. The device has a maximum on-resistance of 950mOhm at 7A and 10V gate drive. Gate charge is 83nC at 10V, and input capacitance is 2800pF at 25V. The MOSFET is housed in a TO-247-3 through-hole package (TO-247AD) suitable for high-power dissipation up to 500W. Operating temperature range is -55°C to 150°C. This device is suitable for applications such as power supplies, inverters, and motor drives requiring high voltage and moderate current handling.
| Qty | Low | High |
|---|---|---|
| 300+ | $12.20 | $12.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1000V.
14A at 25°C case temperature.
950mOhm maximum at 7A and 10V gate drive.
TO-247-3 (TO-247AD).
-55°C to 150°C junction temperature.
The device is listed as RoHS3 Compliant, but this is unverified.
5.5V maximum at 4mA drain current.