| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXYS IXFH13N50 is an N-Channel enhancement mode power MOSFET from the HiPerFET family. It features a drain-source voltage (Vdss) of 500V and a continuous drain current of 13A at 25°C case temperature. The device has a maximum on-resistance of 400mΩ at Vgs = 10V and Id = 6.5A.
This MOSFET is designed for high performance switching applications with low gate charge (typical 110nC) and fast intrinsic rectifier. It is housed in a through-hole TO-247-3 package (TO-247AD) suitable for high power density designs.
The part offers unclamped inductive switching (UIS) rating and high dv/dt capability. Operating junction temperature range is -55°C to +150°C. Maximum power dissipation is 180W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 30+ | $3.47 | $3.47 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum.
13A at Tc = 25°C.
TO-247-3 (TO-247AD).
-55°C to +150°C.