| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29 pcs
|
29 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The IXFH12N80P is an N-Channel enhancement mode power MOSFET from IXYS, part of the PolarHV HiPerFET series. It features a drain-source voltage (Vdss) of 800V and a continuous drain current of 12A at 25°C case temperature.
Key electrical characteristics include a maximum drain-source on-resistance of 0.85Ω at VGS=10V, a gate threshold voltage range of 3.0V to 5.5V, and a maximum power dissipation of 360W. The device offers fast switching with typical turn-on delay of 23ns and rise time of 26ns.
The MOSFET is designed for high voltage applications requiring ruggedness, with avalanche energy rating of 0.8J and dv/dt capability of 10V/ns. It is housed in a TO-247AD (TO-247-3) through-hole package, suitable for easy mounting and high power density.
| Qty | Low | High |
|---|---|---|
| 300+ | $5.27 | $5.27 |
| 510+ | $4.86 | $4.86 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 800V.
The continuous drain current (ID) is 12A at 25°C case temperature.
The maximum drain-source on-resistance (RDS(on)) is 0.85Ω at VGS=10V.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-247-3 (TO-247AD) through-hole package.
It is listed as RoHS3 compliant, but this status is unverified.
The gate threshold voltage (Vgs(th)) ranges from 3.0V to 5.5V at ID=2.5mA.