| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH12N120P is a high-voltage N-Channel MOSFET from IXYS, designed for demanding power switching applications. It features a maximum drain-source voltage of 1200V and a continuous drain current of 12A at case temperature. The device offers a maximum on-resistance of 1.35 Ohm at 500mA and 10V gate drive, ensuring efficient conduction. With a gate charge of 103 nC and input capacitance of 5400 pF, it provides moderate switching performance suitable for many power circuits.
The MOSFET is housed in a through-hole TO-247-3 package (TO-247AD), which allows for effective heat dissipation. It can handle up to 543W of power dissipation and operates over a junction temperature range of -55°C to 150°C. These characteristics make it well-suited for high-voltage power supplies, inverters, motor drives, and other industrial power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $21.53 | $21.53 |
| 10+ | $13.54 | $13.54 |
| 120+ | $13.21 | $13.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V maximum.
TO-247-3 (TO-247AD).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
12A at case temperature.
1.35 Ohm maximum at 500mA, 10V.
103 nC maximum at 10V.