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IXFH10N90 IXFH10N90 is a 900V, 10A N-Channel Power MOSFET from IXYS in a TO-247AD package. It features low on-resistance of 1.1 Ohm and is suitable for high-voltage switching applications.
Mfr Part #:

IXFH10N90

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFH10N90 is a 900V, 10A N-Channel Power MOSFET from IXYS in a TO-247AD package. It features low on-resistance of 1.1 Ohm and is suitable for high-voltage switching applications.
✓ Total Stock: 10 pcs
$ Price Range: $10.88

IXFH10N90 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
10 pcs
On Request
10 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IXFH10N90 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IXFH10N90 Description

Short technical summary and product information.

The IXFH10N90 is an N-Channel enhancement mode power MOSFET from IXYS, part of the HiPerFET family. It is rated for a drain-source voltage (VDSS) of 900V and a continuous drain current (ID) of 10A at 25°C case temperature. The device features a low on-resistance (RDS(on)) of 1.1 Ohm typical at VGS=10V, ensuring efficient power handling.

 

This MOSFET is designed for high dv/dt environments and is rated for unclamped inductive switching (UIS), making it robust for demanding applications. It includes a fast intrinsic rectifier and low package inductance, which simplifies drive and protection circuitry. The TO-247AD package offers easy mounting with a single screw and provides high power density.

 

Typical applications include DC-DC converters, battery chargers, switched-mode power supplies, AC motor control, and temperature/lighting controls. The device is suitable for both hard-switching and resonant-mode topologies.

IXFH10N90 Quick Information

Product Type: Power MOSFET
Series: 10N90
Canonical Name: IXFH10N90 MOSFET N-Channel 900V 10A TO-247AD
Subcategory: N-Channel MOSFET

IXFH10N90 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant

IXFH10N90 Estimated Pricing

Qty Low High
30+ $10.88 $10.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFH10N90 Features

  • N-Channel enhancement mode MOSFET.
  • Rated for 900V drain-source voltage.
  • Continuous drain current of 10A.
  • Low on-resistance of 1.1 Ohm.
  • UIS rated for unclamped inductive switching.

IXFH10N90 Applications

  • Used in DC-DC converters.
  • Suitable for battery chargers.
  • Ideal for switched-mode power supplies.
  • Used in AC motor control.
  • Temperature and lighting controls.

IXFH10N90 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IXFH10N90?

900V.

What package is the IXFH10N90 available in?

TO-247AD (IXFH package).

What is the operating junction temperature range?

-55°C to +150°C.

What is the continuous drain current rating?

10A at TC=25°C.

What is the on-resistance?

1.1 Ohm typical at VGS=10V.

Is the device rated for unclamped inductive switching?

Yes, it is UIS rated.

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